PDC3810V mosfet equivalent, dual n-channel mosfet.
* 30V,35A, RDS(ON) =13mΩ @VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available
Applications
* MB.
PPAK3X3 Dual Pin Configuration
D1D1D2D2
D1 G1 G2
S1G1S2G2
S1
D2 S2
BVDSS 30V
RDSON 13m
ID 35A
Features
*.
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
Image gallery
Download