PDC3812V mosfet equivalent, n-channel mosfet.
* 30V,20A, RDS(ON) =20mΩ @VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available
Applications
* MB .
PPAK3x3 Dual Pin Configuration
D1 D1D2 D2
D1
S1G1S2 G2
G1 G2 S1
D2 S2
BVDSS 30V
RDSON 20m
ID 20A
Features
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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