PDC3908AX - 30V N-Channel MOSFET

Potens semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

30V,65A, RDS(ON) =7.2mΩ@VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

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PDC3908AX 30v n-channel mosfet by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDC3908AX
Manufacturer	Potens semiconductor
File Size	563.73 KB
Description	30V N-Channel MOSFET
Datasheet	PDC3908AX Datasheet

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30V N-Channel MOSFETs PDC3908AX General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK5x6 Pin Configuration D DDDD SSSG G S BVDSS RDSON ID 30V 7.2m 65A Features ⚫ 30V,65A, RDS(ON) =7.