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PDC3908Z - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 30V,48A, RDS(ON) =8.5mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet Details

Part number PDC3908Z
Manufacturer Potens semiconductor
File Size 750.56 KB
Description N-Channel MOSFET
Datasheet download datasheet PDC3908Z Datasheet

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Full PDF Text Transcription

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30V N-Channel MOSFETs PDC3908Z General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK3x3 Pin Configuration DDDD S S SG G D S BVDSS 30V RDSON 8.5m ID 48A Features  30V,48A, RDS(ON) =8.
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