PDC3964CZ - 30V N-Channel MOSFET

Potens semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

30V,72A, RDS(ON) =3.7mΩ@VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

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PDC3964CZ 30v n-channel mosfet by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDC3964CZ
Manufacturer	Potens semiconductor
File Size	810.52 KB
Description	30V N-Channel MOSFET
Datasheet	PDC3964CZ Datasheet

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30V N-Channel MOSFETs PDC3964CZ General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK3X3 Pin Configuration D DDDD S SSG G S BVDSS RDSON ID 30V 3.7m 72A Features  30V,72A, RDS(ON) =3.