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PDC3964X - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 30V,85A, RDS(ON) =4.1mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet Details

Part number PDC3964X
Manufacturer Potens semiconductor
File Size 0.99 MB
Description N-Channel MOSFETs
Datasheet download datasheet PDC3964X Datasheet

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Full PDF Text Transcription

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30V N-Channel MOSFETs PDC3964X General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK5X6 Pin Configuration DDDD S SSG G D S BVDSS 30V RDSON 4.1m ID 85A Features  30V,85A, RDS(ON) =4.
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