Datasheet4U Logo Datasheet4U.com

PDC4756T - N+P Dual Channel MOSFETs

Description

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.

Features

  • Fast switching.
  • Green Device Available.
  • Suit for 4.5V Gate Drive.

📥 Download Datasheet

Datasheet Details

Part number PDC4756T
Manufacturer Potens semiconductor
File Size 906.81 KB
Description N+P Dual Channel MOSFETs
Datasheet download datasheet PDC4756T Datasheet

📁 Similar Datasheet

  • PDC-10-1+ - Directional Coupler (Mini-Circuits)
  • PDC0302 - SMD POWER INDUCTORS (Superworld Electronics)
  • PDC0403 - SMD POWER INDUCTORS (Superworld Electronics)
  • PDC0502 - SMD POWER INDUCTORS (Superworld Electronics)
  • PDC0504 - SMD POWER INDUCTORS (Superworld Electronics)
  • PDC0703 - SMD POWER INDUCTORS (Superworld Electronics)
  • PDC0705 - SMD POWER INDUCTORS (Superworld Electronics)
  • PDC0735C - SMD POWER INDUCTORS (Superworld Electronics)
  • PDC0745C - SMD POWER INDUCTORS (Superworld Electronics)
  • PDC2 - 32 bit Embedded ASIC Core Peripheral (Atmel)
Other Datasheets by Potens semiconductor

Full PDF Text Transcription

Click to expand full text
40V N+P Dual Channel MOSFETs PDC4756T General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK5x6 Dual Pin Configuration D2 D2 D1D1 D1 D2 2 G2 S2 G1 S1 G1 G2 S1 S2 BVDSS 40V -40V RDSON 11.5m 30m ID 42A -27A Features  Fast switching  Green Device Available  Suit for 4.
Published: |