PDD2314 mosfets equivalent, n-channel mosfets.
* 20V, 20A, RDS(ON) =25mΩ@VGS = 4.5V
* Improved dv/dt capability
* Fast switching
* Green Device Available
* Suit for 1.8V Gate Drive Applications
App.
TO252 Pin Configuration
D
D
G S G
S
PDD2314
BVDSS 20V
RDSON 25m
ID 20A
Features
* 20V, 20A, RDS(ON) =25m.
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
Image gallery
Download