Datasheet Specifications
- Part number
- PDD3906
- Manufacturer
- Potens semiconductor
- File Size
- 574.83 KB
- Datasheet
- PDD3906-Potenssemiconductor.pdf
- Description
- N-Channel MOSFET
Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.
PDD3906 Features
* 30V,80A, RDS(ON) =6mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* MB / VGA / Vcore
* POL Applications
* SMPS 2nd SR Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID I
PDD3906 Distributors
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