PDD3906 Datasheet, MOSFET, Potens semiconductor

PDD3906 Features

• Mosfet
• 30V,80A, RDS(ON) =6mΩ@VGS = 10V
• Improved dv/dt capability
• Fast switching
• 100% EAS Guaranteed
• Green Device Available Applications

PDF File Details

Part number:

PDD3906

Manufacturer:

Potens semiconductor

File Size:

574.83kb

Download:

📄 Datasheet

Description:

N-channel mosfet. These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been e

PDD3906 Application

• Applications TO252 Pin Configuration D S G BVDSS 30V RDSON 6mΩ ID 80A Features
• 30V,80A, RDS(ON) =6mΩ@VGS = 10V
• Improved dv/

TAGS

PDD3906

Potens semiconductor

📁 Related Datasheet

PDD3907 - P-Channel MOSFET (Potens semiconductor)
30V P-Channel MOSFETs PDD3907 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDD3908 - N-Channel MOSFETs (Potens semiconductor)
30V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan.

PDD3910 - N-Channel MOSFETs (Potens semiconductor)
30V N-Channel MOSFETs PDD3910 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDD3912 - N-Channel MOSFETs (Potens semiconductor)
30V N-Channel MOSFETs PDD3912 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDD3959 - P-Channel MOSFETs (Potens semiconductor)
30V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan.

PDD3960 - N-Channel MOSFETs (Potens semiconductor)
30V N-Channel MOSFETs PDD3960 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDD3964 - N-Channel MOSFETs (Potens semiconductor)
30V N-Channel MOSFETs PDD3964 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDD3094 - N-Channel MOSFETs (Potens semiconductor)
30V N-Channel MOSFETs PDD3094 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDD30N15 - N-Channel MOSFETs (Potens semiconductor)
150V N-Channel MOSFETs PDD30N15 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDD3710 - N+P Dual Channel MOSFETs (Potens semiconductor)
30V N+P Dual Channel MOSFETs PDD3710 General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMO.