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PDD3959 - P-Channel MOSFETs

Datasheet Summary

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -30V,-85A, RDS(ON) =4.5mΩ@VGS = -10V.
  • Fast switching.
  • Green Device Available.
  • Suit for -4.5V Gate Drive.

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Datasheet Details

Part number PDD3959
Manufacturer Potens semiconductor
File Size 452.32 KB
Description P-Channel MOSFETs
Datasheet download datasheet PDD3959 Datasheet
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30V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D S G G D S PDD3959 BVDSS -30V RDSON 4.5m ID -85A Features  -30V,-85A, RDS(ON) =4.5mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.
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