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PDD3960 - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 30V, 90A, RDS(ON) =2.6mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet Details

Part number PDD3960
Manufacturer Potens semiconductor
File Size 452.57 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDD3960 Datasheet

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Full PDF Text Transcription

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30V N-Channel MOSFETs PDD3960 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D G S G D S BVDSS 30V RDSON 2.6m ID 90A Features  30V, 90A, RDS(ON) =2.
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