PDEB2310Y mosfet equivalent, n-channel mosfet.
* 20V,11A, RDS(ON) =10mΩ @VGS = 10V
* Improved dv/dt capability
* ESD Protection Diode Embedded
* Green Device Available
Applications
* MB / VGA / Vc.
DFN2x2 6L Pin Configuration
D DD SSG
D
G
D S
PDEB2310Y
V
BVDSS RDSON
ID
20V 10m 11A
Features
* 20V,11A, .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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