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PDEC2210K - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 20V,8.6A, RDS(ON) =14mΩ @VGS = 4.5V.
  • Improved dv/dt capability.
  • ESD Protection Diode Embedded.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet Details

Part number PDEC2210K
Manufacturer Potens semiconductor
File Size 699.79 KB
Description N-Channel MOSFET
Datasheet download datasheet PDEC2210K Datasheet

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Full PDF Text Transcription

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20V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK3x3 Dual NEP Pin Configuration D1 D1D2 D2 D1 D2 G1 G2 G2 S1G1S2 S1 S2 PDEC2210K V BVDSS RDSON ID 20V 14m 8.6A Features  20V,8.6A, RDS(ON) =14mΩ @VGS = 4.
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