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PDEC2310Z - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 20V,30A, RDS(ON) =10mΩ @VGS = 10V.
  • Improved dv/dt capability.
  • ESD Protection Diode Embedded.
  • Green Device Available.

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Datasheet Details

Part number PDEC2310Z
Manufacturer Potens semiconductor
File Size 463.51 KB
Description N-Channel MOSFET
Datasheet download datasheet PDEC2310Z Datasheet

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20V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
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