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PDEC3096X - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 30V, 80A, RDS(ON) =5.5mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.
  • G-S ESD Protection Diode Embedded.

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Datasheet Details

Part number PDEC3096X
Manufacturer Potens semiconductor
File Size 605.75 KB
Description N-Channel MOSFET
Datasheet download datasheet PDEC3096X Datasheet

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Full PDF Text Transcription

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30V N-Channel MOSFETs PDEC3096X General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK5x6 Pin Configuration DDDD SSSG G D S BVDSS 30V RDSON 5.5mΩ ID 80A Features  30V, 80A, RDS(ON) =5.
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