PDED3096 mosfet equivalent, n-channel mosfet.
* 30V,70A, RDS(ON) =6mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available
* G-S ESD Protection.
TO252 Pin Configuration
D
D
S G
G S
BVDSS 30V
RDSON 6mΩ
ID 70A
Features
* 30V,70A, RDS(ON) =6mΩ@VGS = 10V <.
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
Image gallery
Download