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PDEJ2210Z - N-Channel MOSFETs

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • 20V, 7.5A, RDS(ON)=15mΩ@VGS=4.5V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.
  • Suit for 1.8V Gate Drive.

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Datasheet Details

Part number PDEJ2210Z
Manufacturer Potens semiconductor
File Size 700.40 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDEJ2210Z Datasheet

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20V N-Channel MOSFETs PDEJ2210Z General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. 2928-J Dual Pin Configuration D1 D1 D2 D2 D1 D2 G1 G2 G2 S2 S1 G1 S1 S2 BVDSS 20V RDSON 15m ID 7.6A Features  20V, 7.5A, RDS(ON)=15mΩ@VGS=4.5V  Improved dv/dt capability  Fast switching  Green Device Available  Suit for 1.