PDEJ2210Z mosfets equivalent, n-channel mosfets.
* 20V, 7.5A, RDS(ON)=15mΩ@VGS=4.5V
* Improved dv/dt capability
* Fast switching
* Green Device Available
* Suit for 1.8V Gate Drive Applications
*.
2928-J Dual Pin Configuration
D1 D1 D2 D2
D1 D2 G1 G2
G2 S2 S1 G1
S1 S2
BVDSS 20V
RDSON 15m
ID 7.6A
Features
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These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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