PDEV2220Y - Dual N-Channel MOSFETs

Description

These dual N Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

Fast switching.
Green Device Available.
Suit for 1.5V Gate Drive.

Potens semiconductor

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Datasheet Details

Part number	PDEV2220Y
Manufacturer	Potens semiconductor
File Size	599.19 KB
Description	Dual N-Channel MOSFETs
Datasheet	PDEV2220Y Datasheet
Additional preview pages of the PDEV2220Y datasheet.

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Full PDF Text Transcription

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20V Dual N Channel MOSFETs PDEV2220Y General Description These dual N Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. BVDSS 20V RDSON 300m ID 800mA Features  Fast switching  Green Device Available  Suit for 1.

Published: Aug 20, 2018 |