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PDF6901 - P-Channel MOSFETs

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -60V,-50A, RDS(ON) 10.2mΩ@VGS = -10V.
  • Fast switching.
  • Green Device Available.
  • Suit for -4.5V Gate Drive.

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Datasheet Details

Part number PDF6901
Manufacturer Potens semiconductor
File Size 782.60 KB
Description P-Channel MOSFETs
Datasheet download datasheet PDF6901 Datasheet
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Full PDF Text Transcription

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60V P-Channel MOSFETs PDF6901 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO220F Pin Configuration D G BVDSS -60V RDSON 10.2m ID -50A Features  -60V,-50A, RDS(ON) 10.2mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.
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