PDN0910S mosfets equivalent, n-channel mosfets.
* 100V,2A, RDS(ON) =200mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
App
*licGaretieonnDsevice Available
* Networ.
SOT23-3S Pin Configuration
D
G
PDN0910S
BVDSS 100V
RDSON 200m
ID 2A
Features
* 100V,2A, RDS(ON) =200mΩ@VGS.
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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