PDN2317S - P-Channel MOSFET

Potens semiconductor

Datasheet Details

Part number	PDN2317S
Manufacturer	Potens semiconductor
File Size	468.24 KB
Description	P-Channel MOSFET
Datasheet	PDN2317S Datasheet

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency fast switching applications.

Overview

20V P-Channel MOSFETs PDN2317S General.

Key Features

-20V,-2.5A, RDS(ON) =160mΩ@VGS = -4.5V.
Improved dv/dt capability.
Fast switching.
Green Device Available.
Suit for -1.8V Gate Drive.

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