PDN3611S Datasheet, Potens semiconductor

* -30V,-4.1A, RDS(ON) =65mΩ@VGS = -10V
* Fast switching
* Green Device Available
* Suit for -2.5V Gate Drive Applications Applications
* Notebook
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SOT23-3S Pin Configuration D S G G D S BVDSS -30V RDSON 65m ID -4.1A Features
* -30V,-4.1A, RDS(ON) =65mΩ@.

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.