Datasheet Details
| Part number | PDN3611S |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 435.81 KB |
| Description | P-Channel MOSFET |
| Datasheet |
 PDN3611S Datasheet
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| Part number | PDN3611S |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 435.81 KB |
| Description | P-Channel MOSFET |
| Datasheet |
PDN3611S Datasheet
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These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
30V P-Channel MOSFETs PDN3611S General.
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