PDN3909S mosfet equivalent, p-channel mosfet.
* -30V,-5.1A, RDS(ON) =32mΩ@VGS = -10V
* Fast switching
* Green Device Available
* Suit for -4.5V Gate Drive Applications
Applications
* Notebook
.
SOT23-3S Pin Configuration
D
D
S G
G S
BVDSS -30V
RDSON 32m
ID -5.1A
Features
* -30V,-5.1A, RDS(ON) =32mΩ@.
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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