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PDN6911S - P-Channel MOSFET

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -60V,-2A, RDS(ON) =190mΩ@VGS = -10V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.

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Datasheet preview – PDN6911S

Datasheet Details

Part number PDN6911S
Manufacturer Potens semiconductor
File Size 1.24 MB
Description P-Channel MOSFET
Datasheet download datasheet PDN6911S Datasheet
Additional preview pages of the PDN6911S datasheet.

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Full PDF Text Transcription

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60V P-Channel MOSFETs PDN6911S General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
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