Datasheet4U Logo Datasheet4U.com

PDP0970 - N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 100V,160A, RDS(ON) =3.5mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

📥 Download Datasheet

Datasheet preview – PDP0970

Datasheet Details

Part number PDP0970
Manufacturer Potens semiconductor
File Size 469.26 KB
Description N-Channel MOSFET
Datasheet download datasheet PDP0970 Datasheet
Additional preview pages of the PDP0970 datasheet.

📁 Similar Datasheet

Other Datasheets by Potens semiconductor

Full PDF Text Transcription

Click to expand full text
100V N-Channel MOSFETs PDP0970 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO220 Pin Configuration D GDS G S BVDSS 100V RDSON 3.5m ID 160A Features  100V,160A, RDS(ON) =3.
Published: |