PDQ02N15 mosfets equivalent, n-channel mosfets.
* 150V,1.4A, RDS(ON) =480mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
App
*licGaretieonnDsevice Available
* Netw.
SOT23-6 Pin Configuration
D DS
D
DD G
G
S
BVDSS 150V
RDSON 480m
ID 1.4A
Features
* 150V,1.4A, RDS(ON) =48.
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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