Datasheet Details
| Part number | PDQ2116 |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 898.12 KB |
| Description | N+P Channel MOSFETs |
| Datasheet |
 PDQ2116 Datasheet
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| Part number | PDQ2116 |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 898.12 KB |
| Description | N+P Channel MOSFETs |
| Datasheet |
PDQ2116 Datasheet
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These N+P dual Channel enhancement mode power BVDSS RDSON ID field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, 20V -20V 40mī 100mī 3.8A -2.5A provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
20V N+P Dual Channel MOSFETs PDQ2116 General.
| Part Number | Description |
|---|---|
| PDQ2215 | Dual P-Channel MOSFETs |
| PDQ2218 | Dual N-Channel MOSFETs |
| PDQ2307 | P-Channel MOSFETs |
| PDQ2307 | 20V P-Channel MOSFETs |
| PDQ02N15 | N-Channel MOSFETs |
| PDQ0854-R | Dual N-Channel MOSFETs |
| PDQ3714 | N+P Channel MOSFETs |
| PDQ3907 | P-Channel MOSFETs |
| PDQ3909 | P-Channel MOSFETs |
| PDQ3911 | P-Channel MOSFETs |