PDQ2218 mosfets equivalent, dual n-channel mosfets.
* 20V, 3.6A, RDS(ON) =60mΩ@VGS = 4.5V
* Improved dv/dt capability
* Fast switching
* Green Device Available
* Suit for 1.8V Gate Drive Applications
Ap.
SOT23-6 Dual Pin Configuration
D1 S1 D2
D1
D2
G1 S2 G2 G1
G2 S1
S2
BVDSS 20V
RDSON 60m
ID 3.6A
Features
These dual N Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high e.
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