Datasheet4U Logo Datasheet4U.com

PDQ2218 - Dual N-Channel MOSFETs

Datasheet Details

Part number PDQ2218
Manufacturer Potens semiconductor
File Size 918.52 KB
Description Dual N-Channel MOSFETs
Datasheet download datasheet PDQ2218 Datasheet

General Description

These dual N Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency fast switching applications.

Overview

Preliminary datasheet 20V Dual N-Channel MOSFETs PDQ2218 General.

Key Features

  • 20V, 3.6A, RDS(ON) =60mΩ@VGS = 4.5V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.
  • Suit for 1.8V Gate Drive.