PDQ4912 Datasheet, Potens semiconductor

* 40V,5A, RDS(ON) =35mΩ @VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* MB /.

SOT23-6 Pin Configuration DDS G D D G D S PDQ4912 BVDSS 40V RDSON 35m ID 5A Features
* 40V,5A, RDS(ON) =3.

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.