* 40V,5A, RDS(ON) =35mΩ @VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* MB /.

SOT23-6 Pin Configuration DDS G D D G D S PDQ4912 BVDSS 40V RDSON 35m ID 5A Features
* 40V,5A, RDS(ON) =3.

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

PDQ02N15

PDQ0854-R

PDQ2116

PDQ2215

PDQ2218

PDQ2307

PDQ3714

PDQ3907

PDQ3909

PDQ3911

PDQ3912

PDQE10

PD-20