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PDR03N65 - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using advanced super junction technology.

Features

  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet Details

Part number PDR03N65
Manufacturer Potens semiconductor
File Size 595.46 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDR03N65 Datasheet

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Full PDF Text Transcription

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650V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using advanced super junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply TO251 Pin Configuration GD S PDR03N65 BVDSS 650V RDSON 5.
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