Datasheet Details
| Part number | PDS0960 |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 705.22 KB |
| Description | N-Channel MOSFETs |
| Datasheet |
 PDS0960 Datasheet
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| Part number | PDS0960 |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 705.22 KB |
| Description | N-Channel MOSFETs |
| Datasheet |
PDS0960 Datasheet
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|
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These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
100V N-Channel MOSFETs PDS0960 General.
| Part Number | Description |
|---|---|
| PDS0966 | N-Channel MOSFETs |
| PDS0976 | N-Channel MOSFET |
| PDS0978 | N-Channel MOSFET |
| PDS04N15 | N-Channel MOSFETs |
| PDS0744 | N+P Channel MOSFETs |
| PDS2305 | P-Channel MOSFETs |
| PDS2603 | P-Channel MOSFETs |
| PDS3710 | N+P Channel MOSFETs |
| PDS3712 | N+P Channel MOSFETs |
| PDS3805 | P-Channel MOSFETs |