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PDS2305 - P-Channel MOSFETs

Datasheet Details

Part number PDS2305
Manufacturer Potens semiconductor
File Size 571.71 KB
Description P-Channel MOSFETs
Datasheet download datasheet PDS2305 Datasheet

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency fast switching applications.

Overview

20V P-Channel MOSFETs PDS2305 General.

Key Features

  • -20V,-11A, RDS(ON) =16mΩ@VGS = -4.5V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.
  • Suit for -1.8V Gate Drive.