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PDS2603 Datasheet, Potens semiconductor

PDS2603 mosfets equivalent, p-channel mosfets.

PDS2603 Avg. rating / M : 1.0 rating-13

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PDS2603 Datasheet

Features and benefits


* -20V,-14A, RDS(ON) =8.5mΩ@VGS = -4.5V
* Improved dv/dt capability
* Fast switching
* Green Device Available
* Suit for -1.8V Gate Drive Applications.

Application

SOP8 Pin Configuration DDDD S SSG G D S PDS2603 BVDSS -20V RDSON 8.5m ID -14A Features
* -20V,-14A, RDS(ON.

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

Image gallery

PDS2603 Page 1 PDS2603 Page 2 PDS2603 Page 3

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