Datasheet Details
| Part number | PDS3808 |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 707.71 KB |
| Description | N-Channel MOSFETs |
| Datasheet |
 PDS3808 Datasheet
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| Part number | PDS3808 |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 707.71 KB |
| Description | N-Channel MOSFETs |
| Datasheet |
PDS3808 Datasheet
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|
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These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
30V N-Channel MOSFETs PDS3808 General.
| Part Number | Description |
|---|---|
| PDS3805 | P-Channel MOSFETs |
| PDS3807 | P-Channel MOSFETs |
| PDS3810 | Dual N-Channel MOSFETs |
| PDS3812 | Dual N-Channel MOSFETs |
| PDS3710 | N+P Channel MOSFETs |
| PDS3712 | N+P Channel MOSFETs |
| PDS3903 | P-Channel MOSFETs |
| PDS3904 | N-Channel MOSFETs |
| PDS3905 | P-Channel MOSFETs |
| PDS3906 | 30V N-Channel MOSFETs |