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PDS4909 - P-Channel MOSFETs

Datasheet Details

Part number PDS4909
Manufacturer Potens semiconductor
File Size 684.88 KB
Description P-Channel MOSFETs
Datasheet download datasheet PDS4909 Datasheet

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency fast switching applications.

Overview

40V P-Channel MOSFETs PDS4909 General.

Key Features

  • -40V,-6.5A, RDS(ON) =45mΩ@VGS = -10V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.