Datasheet Details
| Part number | PDS6701 |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 919.31 KB |
| Description | N+P Channel MOSFETs |
| Datasheet |
 PDS6701 Datasheet
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| Part number | PDS6701 |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 919.31 KB |
| Description | N+P Channel MOSFETs |
| Datasheet |
PDS6701 Datasheet
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These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
60V N+P Dual Channel MOSFETs PDS6701 General.
| Part Number | Description |
|---|---|
| PDS6710 | N+P Channel MOSFETs |
| PDS6806 | N-Channel MOSFETs |
| PDS6808 | N-Channel MOSFETs |
| PDS6810 | N-Channel MOSFETs |
| PDS6903 | P-Channel MOSFETs |
| PDS6904 | N-Channel MOSFETs |
| PDS6904-5 | N-Channel MOSFETs |
| PDS6906 | N-Channel MOSFETs |
| PDS6907 | P-Channel MOSFETs |
| PDS6910 | N-Channel MOSFETs |