PDS6960 Datasheet, Potens semiconductor

* 60V,30A, RDS(ON) =5.8mΩ @VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* Mo.

SOP8 Pin Configuration D D D D G SS S G D S BVDSS 60V RDSON 5.8m ID 30A Features
* 60V,30A, RDS(ON) =5.8m.

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.