PDX4970 mosfets equivalent, n-channel mosfets.
* 40V, 320A, RDS(ON) =1.5mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* Green Device Available
TO247 Pin Configuration
D
S GD
G
S
Appli.
BVDSS 40V
RDSON 1.5m
ID 320A
Features
* 40V, 320A, RDS(ON) =1.5mΩ@VGS = 10V
* Improved dv/dt capability
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
Image gallery
Download