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PDX4970 - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 40V, 320A, RDS(ON) =1.5mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available TO247 Pin Configuration D S GD G S.

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Datasheet Details

Part number PDX4970
Manufacturer Potens semiconductor
File Size 737.62 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDX4970 Datasheet

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Full PDF Text Transcription

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40V N-Channel MOSFETs PDX4970 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. BVDSS 40V RDSON 1.5m ID 320A Features  40V, 320A, RDS(ON) =1.
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