PDX6974 - N-Channel MOSFETs

Potens semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

60V,175A, RDS(ON) =3.2mΩ@VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

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PDX6974 n-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDX6974
Manufacturer	Potens semiconductor
File Size	758.79 KB
Description	N-Channel MOSFETs
Datasheet	PDX6974 Datasheet

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60V N-Channel MOSFETs PDX6974 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO247 Pin Configuration D G BVDSS 60V RDSON 3.2m ID 175A Features  60V,175A, RDS(ON) =3.