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PDX6974 - N-Channel MOSFETs

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 60V,175A, RDS(ON) =3.2mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet Details

Part number PDX6974
Manufacturer Potens semiconductor
File Size 758.79 KB
Description N-Channel MOSFETs
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60V N-Channel MOSFETs PDX6974 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO247 Pin Configuration D G BVDSS 60V RDSON 3.2m ID 175A Features  60V,175A, RDS(ON) =3.
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