HXN0680 mosfet equivalent, silicon n-channel power mosfet.
*Latest Trench Power MOSFET technology
*Low On-state Resistance
*High Current Density
*Low Gate Charge
*100% UIS Test
Product Summery
BVDS 60V
RDSO.
with low gate drive requirements .
Features
*Latest Trench Power MOSFET technology
*Low On-state Resistance
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The HXN0680 is n-channel power trench MOSFET with latest technology. So fast switching speed and low onresistance. Usually used at power switching application . It is also intended for any applications with low gate drive requirements .
Features
*Latest Trench Power MOSFET technology
*Low On.
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