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Power Innovations Limited

BD543B Datasheet Preview

BD543B Datasheet

NPN SILICON POWER TRANSISTORS

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Copyright © 1997, Power Innovations Limited, UK
BD543, BD543A, BD543B, BD543C
NPN SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
q Designed for Complementary Use with the
BD544 Series
q 70 W at 25°C Case Temperature
q 8 A Continuous Collector Current
q 10 A Peak Collector Current
q Customer-Specified Selections Available
B
C
E
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Operating free air temperature range
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
BD543
BD543A
BD543B
BD543C
BD543
BD543A
BD543B
BD543C
NOTES: 1. This value applies for tp 0.3 ms, duty cycle 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
Ptot
Ptot
TA
Tj
Tstg
TL
VALUE
40
60
80
100
40
60
80
100
5
8
10
70
2
-65 to +150
-65 to +150
-65 to +150
260
UNIT
V
V
V
A
A
W
W
°C
°C
°C
°C
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1




Power Innovations Limited

BD543B Datasheet Preview

BD543B Datasheet

NPN SILICON POWER TRANSISTORS

No Preview Available !

BD543, BD543A, BD543B, BD543C
NPN SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V(BR)CEO breakdown voltage
ICES
Collector-emitter
cut-off current
ICEO
IEBO
hFE
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
VCE(sat) saturation voltage
Base-emitter
VBE voltage
Small signal forward
hfe current transfer ratio
|hfe|
Small signal forward
current transfer ratio
IC = 30 mA
(see Note 4)
VCE = 40 V
VCE = 60 V
VCE = 80 V
VCE = 100 V
VCE = 30 V
VCE = 60 V
VEB = 5 V
VCE = 4 V
VCE = 4 V
VCE = 4 V
IB = 0.3 A
IB = 1 A
IB = 1.6 A
VCE = 4 V
VCE = 10 V
VCE = 10 V
IB = 0
VBE = 0
VBE = 0
VBE = 0
VBE = 0
IB = 0
IB = 0
IC = 0
IC = 1 A
IC = 3 A
IC = 5 A
IC = 3 A
IC = 5 A
IC = 8 A
IC = 5 A
IC = 0.5 A
IC = 0.5 A
BD543
BD543A
BD543B
BD543C
BD543
BD543A
BD543B
BD543C
BD543/543A
BD543B/543C
40
60
80
100
(see Notes 4 and 5)
(see Notes 4 and 5)
60
40
15
(see Notes 4 and 5)
f = 1 kHz
f = 1 MHz
20
3
0.4
0.4
0.4
0.4
0.7
0.7
1
0.5
0.5
1
1.4
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1.79 °C/W
62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
ton Turn-on time
toff Turn-off time
IC = 6 A
VBE(off) = -4 V
IB(on) = 0.6 A
RL = 5
IB(off) = -0.6 A
tp = 20 µs, dc 2%
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
0.6 µs
1 µs
PRODUCT INFORMATION
2


Part Number BD543B
Description NPN SILICON POWER TRANSISTORS
Maker Power Innovations Limited
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BD543B Datasheet PDF






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