Copyright © 1997, Power Innovations Limited, UK
BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
JUNE 1993 - REVISED MARCH 1997
q Designed for Complementary Use with
BDV65, BDV65A, BDV65B and BDV65C
q 125 W at 25°C Case Temperature
q 12 A Continuous Collector Current
q Minimum hFE of 1000 at 4 V, 5 A
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. This value applies for tp ≤ 0.1 ms, duty cycle ≤ 10%
2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
-65 to +150
-65 to +150
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.