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Power Innovations Limited

BDV64A Datasheet Preview

BDV64A Datasheet

PNP Transistor

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Copyright © 1997, Power Innovations Limited, UK
BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
JUNE 1993 - REVISED MARCH 1997
q Designed for Complementary Use with
BDV65, BDV65A, BDV65B and BDV65C
SOT-93 PACKAGE
(TOP VIEW)
q 125 W at 25°C Case Temperature
q 12 A Continuous Collector Current
B
1
q Minimum hFE of 1000 at 4 V, 5 A
C2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
NOTES: 1. This value applies for tp 0.1 ms, duty cycle 10%
2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
Ptot
Tj
Tstg
TL
VALUE
-60
-80
-100
-120
-60
-80
-100
-120
-5
-12
-15
-0.5
125
3.5
-65 to +150
-65 to +150
260
UNIT
V
V
V
A
A
A
W
W
°C
°C
°C
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1




Power Innovations Limited

BDV64A Datasheet Preview

BDV64A Datasheet

PNP Transistor

No Preview Available !

BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
JUNE 1993 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V(BR)CEO breakdown voltage
ICEO
Collector-emitter
cut-off current
ICBO
Collector cut-off
current
IEBO
hFE
VCE(sat)
VBE
VEC
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
IC = -30 mA IB = 0
VCB = -30 V
VCB = -40 V
VCB = -50 V
VCB = -60 V
VCB = -60 V
VCB = -80 V
VCB = -100 V
VCB = -120 V
VCB = -30 V
VCB = -40 V
VCB = -50 V
VCB = -60 V
VEB = -5 V
IB = 0
IB = 0
IB = 0
IB = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IC = 0
VCE = -4 V IC = -5 A
IB = -20 mA IC = -5 A
VCE = -4 V IC = -5 A
IE = -10 A IB = 0
(see Note 4)
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
-60
-80
-100
-120
(see Notes 4 and 5)
(see Notes 4 and 5)
(see Notes 4 and 5)
(see Notes 4 and 5)
1000
-2
-2
-2
-2
-0.4
-0.4
-0.4
-0.4
-2
-2
-2
-2
-5
-2
-2.5
-3.5
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1 °C/W
35.7 °C/W
PRODUCT INFORMATION
2


Part Number BDV64A
Description PNP Transistor
Maker Power Innovations Limited
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BDV64A Datasheet PDF






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