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BDW63C Power Innovations Limited NPN Transistor

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Description BDW63, BDW63A, BDW63B, BDW63C, BDW63D NPN SILICON POWER DARLINGTONS Copyright © 1997 Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 q Designed for Complementary Use with BDW64, BDW64A, BDW64B, BDW64C and BDW64D 60 W at 25°C Case Temperature B TO-220 PACKAGE (TOP VIEW) q q q 1 2 3 6 A Continuous Collector Current Minimum hFE of 750 at 3 V, 2 A C E Pin 2 is in electrical cont...
Features rature range Operating free-air temperature range NOTES: 1. 2. 3. 4. VEB IC IB Ptot Ptot ½LIC 2 Tj Tstg TA VCEO VCBO SYMBOL VALUE 45 60 80 100 120 45 60 80 100 120 5 6 0.1 60 2 50 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C V V UNIT These values apply when the base-emitter diode is open circuited. Derate linearly to 150°C case temper...

Datasheet PDF File BDW63C Datasheet - 144.32KB
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