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Power Innovations Limited

BU406 Datasheet Preview

BU406 Datasheet

NPN SILICON POWER TRANSISTORS

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Copyright © 1997, Power Innovations Limited, UK
BU406, BU407
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
q 7 A Continuous Collector Current
q 15 A Peak Collector Current
q 60 W at 25°C Case Temperature
TO-220 PACKAGE
(TOP VIEW)
B1
C2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
Collector-base voltage (IE = 0)
RATING
Collector-emitter voltage (VBE = -2 V)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTE 1: This value applies for tp 10 ms, duty cycle 2%.
BU406
BU407
BU406
BU407
BU406
BU407
SYMBOL
VCBO
VCEX
VCEO
VEB
IC
ICM
IB
Ptot
Tj
Tstg
VALUE
400
330
400
330
200
150
6
7
15
4
60
-55 to +150
-55 to +150
UNIT
V
V
V
V
A
A
A
W
°C
°C
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1




Power Innovations Limited

BU406 Datasheet Preview

BU406 Datasheet

NPN SILICON POWER TRANSISTORS

No Preview Available !

BU406, BU407
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-emitter
V(BR)CEO breakdown voltage
IC = 30 mA IB = 0
140 V
ICES
Collector-emitter
cut-off current
IEBO
Emitter cut-off
current
VCE = 400 V
VCE = 330 V
VCE = 250 V
VCE = 200 V
VCE = 250 V
VCE = 200 V
VEB = 6 V
VBE = 0
VBE = 0
VBE = 0
VBE = 0
VBE = 0
VBE = 0
IC = 0
TC = 150°C
TC = 150°C
BU406
BU407
BU406
BU407
BU406
BU407
5
5
0.1
mA
0.1
1
1
1 mA
hFE
VCE(sat)
Forward current
transfer ratio
Collector-emitter
saturation voltage
VCE = 10 V
VCE = 10 V
IB = 0.5 A
IC = 4 A
IC = 0.5 A
IC = 5 A
(see Notes 2 and 3)
(see Notes 2 and 3)
12
20
1V
Base-emitter
VBE(sat) saturation voltage
IB = 0.5 A IC = 5 A
(see Notes 2 and 3)
1.2 V
Current gain
ft bandwidth product VCE = 5 V IC = 0.5 A
f = 1 MHz
(see Note 4)
6 MHz
Cob Output capacitance VCB = 20 V IE = 0
f = 1 MHz
60 pF
NOTES: 2. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
3. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
4. To obtain ft the [hFE] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [hFE] = 1.
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
2.08 °C/W
70 °C/W
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
ts Storage time
t(off) Turn off time
IC = 5 A
IB(end) = 0.5A
(see Figures 1 and 2)
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN
TYP MAX
2.7
750
UNIT
µs
ns
PRODUCT INFORMATION
2


Part Number BU406
Description NPN SILICON POWER TRANSISTORS
Maker Power Innovations Limited
Total Page 7 Pages
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