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Power Innovations Limited

BU426 Datasheet Preview

BU426 Datasheet

NPN SILICON POWER TRANSISTORS

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Copyright © 1997, Power Innovations Limited, UK
BU426, BU426A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
q Rugged Triple-Diffused Planar Construction
q 900 Volt Blocking Capability
B
SOT-93 PACKAGE
(TOP VIEW)
1
C2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
Collector-base voltage (IE = 0)
RATING
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Peak base current (see Note 1)
Continuous device dissipation at (or below) 50°C case temperature
Operating junction temperature range
Storage temperature range
NOTE 1: This value applies for tp 2 ms, duty cycle 2%.
BU426
BU426A
BU426
BU426A
BU426
BU426A
SYMBOL
VCBO
VCES
VCEO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
VALUE
800
900
800
900
375
400
6
10
+2, -0.1
±3
70
-65 to +150
-65 to +150
UNIT
V
V
V
A
A
A
A
W
°C
°C
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1




Power Innovations Limited

BU426 Datasheet Preview

BU426 Datasheet

NPN SILICON POWER TRANSISTORS

No Preview Available !

BU426, BU426A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
VCEO(sus) sustaining voltage
IC = 100 mA L = 25 mH
(see Note 2)
BU426
BU426A
375
400
ICES
Collector-emitter
cut-off current
IEBO
Emitter cut-off
current
VCE = 800 V
VCE = 900 V
VCE = 800 V
VCE = 900 V
VEB = 10 V
VBE = 0
VBE = 0
VBE = 0
VBE = 0
IC = 0
TC = 125°C
TC = 125°C
BU426
BU426A
BU426
BU426A
1
1
2
2
10
Forward current
hFE transfer ratio
VCE = 5 V IC = 0.6 A
(see Notes 3 and 4)
30 60
VCE(sat)
VBE(sat)
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
IB = 0.5 A
IB = 1.25 A
IB = 0.5 A
IB = 1.25 A
IC = 2.5 A
IC = 4 A
IC = 2.5 A
IC = 4 A
(see Notes 3 and 4)
(see Notes 3 and 4)
1.5
3
1.4
1.6
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
V
V
thermal characteristics
RθJC
PARAMETER
Junction to case thermal resistance
MIN TYP MAX UNIT
1.1 °C/W
resistive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
ton Turn on time
ts Storage time
tf Fall time
tf Fall time
IC = 2.5 A
VCC = 250 V
IC = 2.5 A
VCC = 250 V
IB(on) = 0.5 A
IB(off) = -1 A
(see Figures 1 and 2)
IB(on) = 0.5 A
TC = 95°C
IB(off) = -1 A
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
0.3 0.6
2 3.5
0.15
µs
µs
µs
0.2 0.75 µs
PRODUCT INFORMATION
2


Part Number BU426
Description NPN SILICON POWER TRANSISTORS
Maker Power Innovations Limited
Total Page 7 Pages
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