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Power Innovations Limited

TIP130 Datasheet Preview

TIP130 Datasheet

NPN SILICON POWER DARLINGTONS

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Copyright © 1997, Power Innovations Limited, UK
TIP130, TIP131, TIP132
NPN SILICON POWER DARLINGTONS
JUNE 1973 - REVISED MARCH 1997
q Designed for Complementary Use with
TIP135, TIP136 and TIP137
q 70 W at 25°C Case Temperature
q 8 A Continuous Collector Current
q Minimum hFE of 1000 at 4 V, 4 A
TO-220 PACKAGE
(TOP VIEW)
B1
C2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
TIP130
TIP131
TIP132
TIP130
TIP131
TIP132
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
Ptot
½LIC2
Tj
Tstg
TL
60
80
100
60
80
100
5
8
12
0.3
70
2
75
-65 to +150
-65 to +150
260
V
V
V
A
A
A
W
W
mJ
°C
°C
°C
NOTES: 1. This value applies for tp 0.3 ms, duty cycle 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 ,
VBE(off) = 0, RS = 0.1 , VCC = 20 V.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1




Power Innovations Limited

TIP130 Datasheet Preview

TIP130 Datasheet

NPN SILICON POWER DARLINGTONS

No Preview Available !

TIP130, TIP131, TIP132
NPN SILICON POWER DARLINGTONS
JUNE 1973 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V(BR)CEO breakdown voltage
ICEO
Collector-emitter
cut-off current
ICBO
Collector cut-off
current
IEBO
hFE
VCE(sat)
VBE
Cobo
VEC
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Output capacitance
Parallel diode
forward voltage
IC = 30 mA
VCE = 30 V
VCE = 40 V
VCE = 50 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
VEB = 5 V
VCE = 4 V
VCE = 4 V
IB = 16 mA
IB = 30 mA
VCE = 4 V
VCB = 10 V
IE = 8 A
IB = 0
IB = 0
IB = 0
IB = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IC = 0
IC = 1 A
IC = 4 A
IC = 4 A
IC = 6 A
IC = 4 A
IE = 0
IB = 0
(see Note 5)
TC = 100°C
TC = 100°C
TC = 100°C
TIP130
TIP131
TIP132
TIP130
TIP131
TIP132
TIP130
TIP131
TIP132
TIP130
TIP131
TIP132
60
80
100
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
500
1000
(see Notes 5 and 6)
0.5
0.5
0.5
0.2
0.2
0.2
1
1
1
5
15000
2
3
2.5
200
3.5
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
pF
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1.78 °C/W
62.5 °C/W
PRODUCT INFORMATION
2


Part Number TIP130
Description NPN SILICON POWER DARLINGTONS
Maker Power Innovations Limited
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