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LQA12T300C Datasheet Preview

LQA12T300C Datasheet

Q-Series Common-Cathode Diode

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www.DataSheet.co.kr
LQA12T300C, LQA12B300C
QspeedFamily
300 V, 12 A Q-Series Common-Cathode Diode
Product Summary
IF(AVG) per diode
VRRM
QRR (Typ at 125 °C)
IRRM (Typ at 125 °C)
Softness tb/ta (Typ at 125 °C)
6
300
27
1.87
0.7
A
V
nC
A
General Description
This device has the lowest QRR of any 300 V
Silicon diode. Its recovery characteristics
increase efficiency, reduce EMI and eliminate
snubbers.
Applications
Pin Assignment
AC/DC and DC/DC output rectification
Output & freewheeling diodes
Motor drive circuits
DC-AC inverters
Features
TO-220AB
LQA12T300C A1
A2
TO-263AB
LQA12B300C
K
RoHS Compliant
Package uses Lead-free plating and “Green” mold
compound Halogen free per IEC 61249-2-21.
Absolute Maximum Ratings
Low QRR, Low IRRM, Low tRR
High dIF/dt capable (1000A/µs)
Soft recovery
Benefits
Increases efficiency
Eliminates need for snubber circuits
Reduces EMI filter component size & count
Enables extremely fast switching
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional
operation under these conditions is not implied.
Symbol
VRRM
IF(AVG)
Parameter
Peak repetitive reverse voltage
Average forward current
IFSM
IFSM
TJ
TSTG
PD
Non-repetitive peak surge current
Non-repetitive peak surge current
Maximum junction temperature
Storage temperature
Lead soldering temperature
Power dissipation
Conditions
Per Diode, TJ = 150 °C, TC = 117°C
Per Device, TJ = 150 °C, TC = 117°C
Per Diode, 60 Hz, ½ cycle
Per Diode, ½ cycle of t = 28 µs Sinusoid,
TC = 25 °C
Leads at 1.6mm from case, 10 sec
TC = 25 °C
Rating
300
6
12
37
Units
V
A
A
A
350 A
150
–55 to 150
300
33.8
°C
°C
°C
W
Thermal Resistance
Symbol Resistance from:
RθJA Junction to ambient
RθJC
Junction to case
Conditions
TO-220AB (only)
Per Diode
Per Device
Rating
62
3.7
1.9
Units
°C/W
°C/W
°C/W
www.powerint.com
January 2011
Datasheet pdf - http://www.DataSheet4U.net/




Power Integrations

LQA12T300C Datasheet Preview

LQA12T300C Datasheet

Q-Series Common-Cathode Diode

No Preview Available !

www.DataSheet.co.kr
LQA12T300C, LQA12B300C
Electrical Specifications at TJ= 25 °C (unless otherwise specified)
Symbol Parameter
Conditions
Min Typ Max
DC Characteristics per diode
IR Reverse current per diode VR = 300 V, TJ = 25 °C
VR = 300 V, TJ = 125 °C
VF Forward voltage per diode IF = 6 A, TJ = 25 °C
IF = 6 A, TJ = 150 °C
CJ Junction capacitance per VR = 10 V, 1 MHz
diode
Dynamic Characteristics per diode
- - 25
- 0.24 -
- 1.6 1.9
- 1.34 -
- 19 -
tRR
Reverse recovery time,
dIF/dt =200 A/µs TJ=25 °C
- 11.5 -
per diode
VR=200, IF=6 A TJ=125 °C
-
21
-
QRR Reverse recovery charge, dIF/dt =200 A/µs TJ=25 °C
- 8.5 13
per diode
VR=200, IF=6 A TJ =125 °C
-
27
-
IRRM Maximum reverse
dIF/dt =200 A/µs TJ =25 °C
- 1.15 1.6
recovery current, per
diode
VR=200, IF=6 A TJ=125 °C - 1.87 -
S
Softness per diode= tb
ta
dIF/dt =200 A/µs TJ =25 °C
VR=200, IF=6 A TJ=125 °C
-
-
0.7
0.7
-
-
Units
µA
mA
V
V
pF
ns
ns
nC
nC
A
A
Note to component engineers: Q-Series diodes employ Schottky technologies in their design and construction.
Therefore, component engineers should plan their test setups to be similar to traditional Schottky test setups.
(For further details, see application note AN-300.)
VR
IF
0
dIF/dt
tRR
ta tb
IRRM
0.1xIRRM
Pulse generator
L1
15V
+ Rg
Q1
Figure 1. Reverse Recovery Definitions
Figure 2. Reverse Recovery Test Circuit
D1
DUT
www.powerint.com
2
Rev 1.2 01/11
Datasheet pdf - http://www.DataSheet4U.net/


Part Number LQA12T300C
Description Q-Series Common-Cathode Diode
Maker Power Integrations
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LQA12T300C Datasheet PDF






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