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LQA16T300 Datasheet Preview

LQA16T300 Datasheet

Q-Series Diode

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www.DataSheet.co.kr
LQA16T300
QspeedFamily
300 V, 16 A Q-Series Diode
Product Summary
IF(AVG)
VRRM
QRR (Typ at 125 °C)
IRRM (Typ at 125 °C)
Softness tb/ta (Typ at 125 °C)
16
300
44
2.65
0.7
A
V
nC
A
Pin Assignment
AC
TO-220AC
RoHS Compliant
Package uses Lead-free plating and
Green mold compound.
Halogen free per IEC 61249-2-21.
General Description
This device has the lowest QRR of any 300 V
Silicon diode. Its recovery characteristics
increase efficiency, reduce EMI and eliminate
snubbers.
Applications
AC/DC and DC/DC output rectification
Output and freewheeling diodes
DC-AC Inverters
Features
Low QRR, Low IRRM, Low tRR
High dIF/dt capable (1000A/µs)
Soft recovery
Benefits
Increases efficiency
Eliminates need for snubber circuits
Reduces EMI filter component size & count
Enables extremely fast switching
Absolute Maximum Ratings
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional
operation under these conditions is not implied.
Symbol
VRRM
IF(AVG)
IFSM
IFSM
TJ(MAX)
TSTG
PD
Parameter
Peak repetitive reverse voltage
Average forward current
Non-repetitive peak surge current
Non-repetitive peak surge current
Maximum junction temperature
Storage temperature
Lead soldering temperature
Power dissipation
Conditions
TJ = 150 °C, TC = 104 °C
60 Hz, ½ cycle
½ cycle of t=28 µs Sinusoid, TC=25 °C
Leads at 1.6 mm from case, 10 sec
TC = 25 °C
Rating
300
16
100
350
150
–55 to 150
300
65.8
Units
V
A
A
A
°C
°C
°C
W
Thermal Resistance
Symbol
RθJA
RθJC
Resistance from:
Junction to ambient
Junction to case
Conditions
TO-220
TO-220
Rating
62
1.9
Units
°C/W
°C/W
www.powerint.com
January 2011
Datasheet pdf - http://www.DataSheet4U.net/




Power Integrations

LQA16T300 Datasheet Preview

LQA16T300 Datasheet

Q-Series Diode

No Preview Available !

www.DataSheet.co.kr
LQA16T300
Electrical Specifications at TJ= 25 °C (unless otherwise specified)
Symbol Parameter
Conditions
Min Typ Max
DC Characteristics
IR Reverse current
VF Forward voltage
CJ Junction capacitance
Dynamic Characteristics
tRR Reverse recovery time
QRR Reverse recovery charge
IRRM Maximum reverse
recovery current
S Softness factor = tb
ta
VR = 300V, TJ = 25 °C
VR = 300V, TJ = 125 °C
IF = 16A, TJ = 25 °C
IF = 16A, TJ = 150 °C
VR = 10V, 1 MHz
dI/dt =200A/µs
VR=200V,IF=16A
dI/dt =200A/µs
VR=200V,IF=16A
dI/dt =200A/µs
VR=200V,IF=16A
dI/dt =200A/µs
VR=200V,IF=16A
TJ=25 °C
TJ=125 °C
TJ=25 °C
TJ=125 °C
TJ =25 °C
TJ=125 °C
TJ =25 °C
TJ=125 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
- 25
0.45 -
1.6 1.9
1.4 -
50 -
13 -
25 -
11.5 15
44 -
1.5 1.85
2.65 -
0.7 -
0.7 -
Units
µA
mA
V
V
pF
ns
ns
nC
nC
A
A
Note to component engineers: Q-Series diodes employ Schottky technologies in their design and construction.
Therefore, Component Engineers should plan their test setups to be similar to those for traditional Schottky test setups.
(For additional details, see Application Note AN-300.)
VR
IF
0
dIF/dt
tRR
ta tb
IRRM
0.1xIRRM
Pulse generator
L1
15V
+ Rg
Q1
Figure 1. Reverse Recovery Definitions
Figure 2. Reverse Recovery Test Circuit
D1
DUT
www.powerint.com
2
Rev 1.7 01/11
Datasheet pdf - http://www.DataSheet4U.net/


Part Number LQA16T300
Description Q-Series Diode
Maker Power Integrations
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