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LXA04T600 Datasheet Preview

LXA04T600 Datasheet

X-Series PFC Diode

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www.DataSheet.co.kr
LXA04T600, LXA04B600
QSpeedFamily
600 V, 4 A X-Series PFC Diode
Product Summary
IF(AVG)
VRRM
QRR (Typ at 125 °C)
IRRM (Typ at 125 °C)
Softness tb/ta (Typ at 125 °C)
4
600
50
2.6
0.8
A
V
nC
A
Pin Assignment
KK
NC K
K
A
A
TO-220AC
LXA04T600
TO-263AB
LXA04B600
AK
RoHS Compliant
Package uses Lead-free plating and
Green mold compound.
Halogen free per IEC 61249-2-21.
General Description
This device has the lowest QRR of any 600V
Silicon diode. Its recovery characteristics
increase efficiency, reduce EMI and eliminate
snubbers.
Applications
Power Factor Correction (PFC) Boost Diode
Motor drive circuits
DC-AC Inverters
Features
Low QRR, Low IRRM, Low tRR
High dIF/dt capable (1000A/µs)
Soft recovery
Benefits
Increases efficiency
Eliminates need for snubber circuits
Reduces EMI filter component size & count
Enables extremely fast switching
Absolute Maximum Ratings
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional
operation under these conditions is not implied.
Symbol
VRRM
IF(AVG)
IFSM
IFSM
TJ(MAX)
TSTG
PD
VRRM
Parameter
Peak repetitive reverse voltage
Average forward current
Non-repetitive peak surge current
Non-repetitive peak surge current
Maximum junction temperature
Storage temperature
Lead soldering temperature
Power dissipation
Peak repetitive reverse voltage
Conditions
TJ = 150 °C, TC = 127 °C
60 Hz, ½ cycle
½ cycle of t=28 μs Sinusoid, TC=25 °C
Leads at 1.6 mm from case, 10 sec
TC = 25 °C
Rating
600
4
30
350
150
–55 to 150
300
52
600
Units
V
A
A
A
°C
°C
°C
W
V
Thermal Resistance
Symbol
RJA
RJC
Resistance from:
Junction to ambient
Junction to case
Conditions
TO-220 (Only)
Rating
62
2.4
Units
°C/W
°C/W
www.powerint.com
January 2011
Datasheet pdf - http://www.DataSheet4U.net/




Power Integrations

LXA04T600 Datasheet Preview

LXA04T600 Datasheet

X-Series PFC Diode

No Preview Available !

www.DataSheet.co.kr
LXA04T600, LXA04B600
Electrical Specifications at TJ= 25 C (unless otherwise specified)
Symbol Parameter
Conditions
Min Typ Max
DC Characteristics
IR Reverse current
VF Forward voltage
CJ Junction capacitance
Dynamic Characteristics
VR = 600V, TJ = 25 °C
VR = 600V, TJ = 125 °C
IF = 4A, TJ = 25 °C
IF = 4A, TJ = 150 °C
VR = 10V, 1 MHz
- - 250
- 0.45 -
- 2.42 2.96
- 2.10 -
- 21 -
tRR
Reverse recovery time
dI/dt =200 A/s
TJ=25 °C
-
18.5
-
VR=400 V, IF=4 A TJ=125 °C
-
27.5
-
QRR
Reverse recovery charge dI/dt =200A/s
TJ=25 °C
-
21.1 29.0
VR=400 V, IF=4 A TJ =125 °C
-
50.0
-
IRRM Maximum reverse
recovery current
dI/dt =200 A/s
VR=400 V, IF=4 A
TJ =25 °C
TJ=125 °C
-
-
1.75 2.3
2.6 -
S
Softness factor =
tb
ta
dI/dt =200 A/s
TJ =25 °C
-
0.8
-
VR=400 , IF=4 A
TJ=125 °C
-
0.8
-
Units
A
mA
V
V
pF
ns
ns
nC
nC
A
A
Note to component engineers: QSpeed diodes employ Schottky technologies in their design and construction.
Therefore, Component Engineers should plan their test setups to be similar to those for traditional Schottky test setups.
(For additional details, see Application Note AN-300.)
VR
IF
0
dIF/dt
tRR
ta tb
IRRM
0.1xIRRM
Pulse generator
L1
15V
+ Rg
Q1
Figure 1. Reverse Recovery Definitions
Figure 2. Reverse Recovery Test Circuit
D1
DUT
www.powerint.com
2
Rev 1.4 01/11
Datasheet pdf - http://www.DataSheet4U.net/


Part Number LXA04T600
Description X-Series PFC Diode
Maker Power Integrations
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LXA04T600 Datasheet PDF






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