 Advanced Mitsubishi R-Series Chip Technology  Low VCE(sat)  Creepage and Clearance meet IEC 60077-1  High Isolation Voltage  Rugged SWSOA and RRSOA  Com.

Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnec.

Powerex IGBT Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and .

QID3320004

QID3310006

QID3330001

QID3340001

QID3350001

QID0630006

QID0640020

QID0660023

QID1210005

QID1210006

QID1230015

QID4515001

QID4515002